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Freescale Semiconductor Technical Data
Document Number: MRF5S4140H Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28-volt base station equipment. * Typical Single- Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1250 mA, Pout = 28 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 21 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47.6 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S4140HR3 MRF5S4140HSR3
465 MHz, 28 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF5S4140HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF5S4140HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 427 2.4 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 73C, 140 W CW Case Temperature 74C, 28 W CW Symbol RJC Value (1,2) 0.41 0.47 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S4140HR3 MRF5S4140HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.42 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.3 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 3 0.1 -- 3 4 0.2 6.2 4 5 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. N - CDMA, f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps D ACPR IRL 20 28.5 -- -- 21 30 - 47.6 - 14 23 -- - 45 -9 dB % dBc dB
MRF5S4140HR3 MRF5S4140HSR3 2 RF Device Data Freescale Semiconductor
B2 VBIAS + + C18 C8 B1 Z9 Z10 RF INPUT Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C4 C5 C6 DUT Z2 C3 Z3 R1 Z4 Z5 Z6 Z7 C7 Z8 C9 C10 C11 C12 Z11 Z12 Z13 Z14 Z15 Z16 L1 C16 C17 C19 + C20 + C21 + C22
VSUPPLY
Z17 C14 C13
Z18
Z19
RF OUTPUT
C15
0.402 x 0.080 Microstrip 1.266 x 0.080 Microstrip 0.211 x 0.220 Microstrip 0.139 x 0.220 Microstrip 0.239 x 0.220 Microstrip 0.040 x 0.640 Microstrip 0.080 x 0.640 Microstrip 0.276 x 0.640 Microstrip 1.000 x 0.226 Microstrip 0.498 x 0.630 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB
0.125 x 0.220 Microstrip 0.324 x 0.220 Microstrip 0.050 x 0.220 Microstrip 0.171 x 0.080 Microstrip 0.377 x 0.080 Microstrip 0.358 x 0.080 Microstrip 0.361 x 0.080 Microstrip 0.131 x 0.080 Microstrip 0.277 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55
Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic -- 460 - 470 MHz
Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values -- 460 - 470 MHz
Part B1, B2 C1, C14 C2, C13 C3 C4 C5 C6, C7 C8 C9, C10 C11 C12 C15 C16 C17 C18, C19, C20, C21 C22 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 18 pF Chip Capacitor 30 pF Chip Capacitor 24 pF Chip Capacitor 13 pF Chip Capacitors 0.02 F, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 1.5 pF Chip Capacitor 47 pF Chip Capacitor 0.56 F, 50 V Chip Capacitor 10 F, 35 V Tantalum Chip Capacitors 470 F, 63 V Electrolytic Capacitor 39 nH Inductor 100 , 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 27291SL 100B180JP500X 100B300JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 100B1R5JP500X 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC Johanson ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Kemet Kemet United Chemi - Con Coilcraft
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 3
C18
C22
+
B2 C8 450 MHz Rev. 0 Ver. B C19 C20 C21 C17 C7 C1 C3 C16 R1 C4 CUT OUT AREA L1 C10 C11 C12 C13 C14 C15
B1
C9
C2
C5 C6
Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout -- 460 - 470 MHz
MRF5S4140HR3 MRF5S4140HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 460 - 470 MHz
21.5 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 16.5 16 430 440 450 460 470 480 f, FREQUENCY (MHz) ALT1 D VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR IRL Gps
38 35 32 29 26 -40 ACPR (dBc), ALT1 (dBc) -45 -50 -55 -60 -65 -70 490 D, DRAIN EFFICIENCY (%) -1 -3 -5 -7 -9 -11 -13 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 1250 mA 100 Pout, OUTPUT POWER (WATTS) PEP 400 ACPR (dBc), ALT1 (dBc) 1850 mA -30 -35 -40 -45 950 mA IDQ = 650 mA -2 -4 -6 -8 -10 -12 -14 1550 mA
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
20.8 20.3 19.8 Gps, POWER GAIN (dB) 19.3 18.8 18.3 17.8 17.3 16.8 16.3 15.8 430 440 450 460 470 480 f, FREQUENCY (MHz) ALT1 IRL D VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR Gps 55 50 45 40 35 -35 -40 -45 -50 -55 -60 490
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg.
23 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1850 mA 22 Gps, POWER GAIN (dB) 21 20 19 18 17 6 10 100 Pout, OUTPUT POWER (WATTS) PEP 400 1550 mA 1250 mA 950 mA 650 mA -10 -15 -20 -25
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
10
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- 460 - 470 MHz
IMD, INTERMODULATION DISTORTION (dBc)
-30 -35
VDD = 28 Vdc, IDQ = 1250 mA, f1 = 465 MHz f2 = 467.5 MHz, Two-Tone Measurements
IMD, INTERMODULATION DISTORTION (dBc)
-25
0 VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1250 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 465 MHz
-10
3rd Order -40 -45 5th Order -50 -55 -60 10 7th Order 100 Pout, OUTPUT POWER (WATTS) PEP 200
-20
-30
3rd Order
-40
5th Order 7th Order
-50 0.1 1 TWO-TONE SPACING (MHz) 10 60
Figure 7. Intermodulation Distortion Products versus Output Power
60
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 53.57 dBm (227 W) Ideal P3dB = 52.99 dBm (198 W) P1dB = 52.21 dBm (166 W) Actual
Pout, OUTPUT POWER (dBm)
56
52
48 VDD = 28 Vdc, IDQ = 1250 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 465 MHz 23 27 31 35 39
44
40 19
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 1250 mA, f = 465 MHz N-CDMA IS-95 (Pilot, Sync, Paging Traffic Codes 8 Through 13) 25_C 30 Gps 20 25_C 10 85_C D 25_C -30_C 85_C 10 Pout, OUTPUT POWER (WATTS) AVG. -75 60 ALT1 TC = -30_C 85_C -59 -30_C -51 -35 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
40
ACPR
-43
-67
25_C 0 1
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRF5S4140HR3 MRF5S4140HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 460 - 470 MHz
26 25 24 Gps, POWER GAIN (dB) 23 22 21
D TC = -30_C 25_C Gps
25_C 85_C
60 50 40 30 20 10 0 300
20 85_C 19 18 2 10 Pout, OUTPUT POWER (WATTS) CW 100
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 32 V 18.5 18 17.5 0 50 100 28 V VDD = 12 V 16 V 24 V 20 V 150 200 250 IDQ = 1250 mA f = 465 MHz
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 7
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc IDQ = 1250 mA f = 465 MHz
80 -30_C 70
Zo = 2
f = 490 MHz
Zload f = 490 MHz
f = 440 MHz
Zsource
f = 440 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 440 445 450 455 460 465 470 475 480 485 490 Zsource W 0.359 - j1.19 0.389 - j1.11 0.379 - j1.03 0.360 - j0.959 0.355 - j0.873 0.352 - j0.773 0.350 - j0.710 0.350 - j0.628 0.356 - j0.540 0.355 - j0.473 0.345 - j0.388 Zload W 1.35 - j0.870 1.31 - j0.743 1.34 - j0.641 1.32 - j0.539 1.31 - j0.420 1.30 - j0.274 1.29 - j0.173 1.28 - j0.044 1.29 + j0.090 1.29 + j0.195 1.28 + j0.313
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance -- 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 8 RF Device Data Freescale Semiconductor
B2 VBIAS + + C18 C8 B1 Z9 Z10 RF INPUT Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C4 C5 C6 DUT Z2 C3 Z3 R1 Z4 Z5 Z6 Z7 C7 Z8 C9 C10 C11 C12 Z11 Z12 Z13 Z14 Z15 Z16 L1 C16 C17 C19 + C20 + C21 + C22
VSUPPLY
Z17 C14 C13
Z18
Z19
RF OUTPUT
C15
0.402 x 0.080 Microstrip 1.266 x 0.080 Microstrip 0.211 x 0.220 Microstrip 0.139 x 0.220 Microstrip 0.239 x 0.220 Microstrip 0.040 x 0.640 Microstrip 0.080 x 0.640 Microstrip 0.276 x 0.640 Microstrip 1.000 x 0.226 Microstrip 0.498 x 0.630 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB
0.125 x 0.220 Microstrip 0.324 x 0.220 Microstrip 0.050 x 0.220 Microstrip 0.171 x 0.080 Microstrip 0.377 x 0.080 Microstrip 0.358 x 0.080 Microstrip 0.361 x 0.080 Microstrip 0.131 x 0.080 Microstrip 0.277 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55
Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic -- 420 - 430 MHz
Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values -- 420 - 430 MHz
Part B1, B2 C1, C14 C2, C13 C3 C4 C5 C6, C7 C8 C9, C10 C11 C12 C15 C16 C17 C18, C19, C20, C21 C22 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 18 pF Chip Capacitor 39 pF Chip Capacitor 24 pF Chip Capacitor 13 pF Chip Capacitors 0.02 F, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 1.5 pF Chip Capacitor 47 pF Chip Capacitor 0.56 F, 50 V Chip Capacitor 10 F, 35 V Tantalum Chip Capacitors 470 F, 63 V Electrolytic Capacitor 39 nH Inductor 100 , 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 27291SL 100B180JP500X 100B390JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 100B1R5JP500X 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC Johanson ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Kemet Kemet United Chemi - Con Coilcraft
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 9
C18
C22
-
B2 C8
450 MHz Rev. 0 Ver. A C19 C20 C21 C17 C7
+
B1
C1
C3
C16 R1 L1 C4 CUT OUT AREA C10 C11 C12 C13 C14 C15
C9
C2
C5 C6
Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout -- 420 - 430 MHz
MRF5S4140HR3 MRF5S4140HSR3 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 420 - 430 MHz
21.7 21.4 21.1 Gps, POWER GAIN (dB) 20.8 20.5 20.2 19.9 19.6 19.3 19 410 415 420 425 430 435 f, FREQUENCY (MHz) ALT1 ACPR IRL Gps VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D
33 31 29 27 25 ACPR (dBc), ALT1 (dBc) -41 -47 -53 -59 -65 440 -5 -8 -11 -14 -17 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -4 -7 -10 -13 -16 -19 IRL, INPUT RETURN LOSS (dB)
Figure 16. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
21.5 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 16.5 410 415 420 425 430 435 f, FREQUENCY (MHz) ALT1 IRL Gps VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N-CDMA IS-95 (Pilot Sync, Paging, Traffic Codes 8 Through 13) ACPR D 47 44.5 42 39.5 37 -35 -40 -45 -50 -55 -60 440
Figure 17. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg.
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 11
IRL, INPUT RETURN LOSS (dB)
f = 450 MHz f = 450 MHz
Zsource f = 400 MHz f = 400 MHz Zo = 5
Zload
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 400 405 410 415 420 425 430 435 440 445 450 Zsource W 0.454 - j0.530 0.476 - j0.435 0.430 - j0.360 0.455 - j0.281 0.419 - j0.153 0.421 - j0.135 0.435 - j0.032 0.426 + j0.048 0.407 + j0.044 0.429 + j0.262 0.452 + j0.341 Zload W 1.87 - j0.530 1.91 - j0.376 1.88 - j0.276 1.91 - j0.046 1.89 - j0.019 1.92 + j0.128 1.97 + j0.276 1.99 + j0.392 1.99 + j0.537 2.05 + j0.675 2.10 + j0.765
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 18. Series Equivalent Source and Load Impedance -- 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 12 RF Device Data Freescale Semiconductor
B2 VBIAS + C16 C7 B1 Z9 Z10 RF INPUT R1 Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C3 C4 C5 DUT Z2 Z3 Z4 Z5 Z6 Z7 C6 Z8 C8 C9 C10 C11 Z11 Z12 Z13 Z14 Z15 Z16 L1 C14 C15 + C17 + C18 + C19 + C20
VSUPPLY
Z17 C13 C12
Z18
RF OUTPUT
0.402 x 0.080 Microstrip 1.266 x 0.080 Microstrip 0.211 x 0.220 Microstrip 0.139 x 0.220 Microstrip 0.239 x 0.220 Microstrip 0.040 x 0.640 Microstrip 0.080 x 0.640 Microstrip 0.276 x 0.640 Microstrip 1.000 x 0.226 Microstrip 0.498 x 0.630 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 PCB
0.125 x 0.220 Microstrip 0.324 x 0.220 Microstrip 0.050 x 0.220 Microstrip 0.171 x 0.080 Microstrip 0.377 x 0.080 Microstrip 0.358 x 0.080 Microstrip 0.361 x 0.080 Microstrip 0.408 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55
Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic -- 489 - 499 MHz
Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values -- 489 - 499 MHz
Part B1, B2 C1, C13 C2 C3, C4 C5, C6 C7 C8, C9 C10 C11 C12 C14 C15 C16, C17, C18, C19 C20 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 18 pF Chip Capacitor 24 pF Chip Capacitors 13 pF Chip Capacitors 0.02 F, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitor, Gigatrim 47 pF Chip Capacitor 0.56 F, 50 V Chip Capacitor 10 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitor 39 nH Inductor 100 , 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 100B180JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 27291SL 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC ATC ATC ATC ATC ATC ATC ATC Johanson ATC Kemet Kemet United Chemi - Con Coilcraft
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 13
C16
C20
-
B2 C7
450 MHz Rev. 0 Ver. A C17 C18 C19 C15 C6
+
B1
C1
C2
C14 R1 L1 C3 CUT OUT AREA C9 C10 C11 C12 C13
C8
C4 C5
Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout -- 489 - 499 MHz
MRF5S4140HR3 MRF5S4140HSR3 14 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 489 - 499 MHz
21.7 21.4 21.1 Gps, POWER GAIN (dB) 20.8 20.5 20.2 19.9 19.6 19.3 19 480 485 490 495 500 505 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1250 mA N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D Gps
33 31 29 27 25 ACPR (dBc), ALT1 (dBc) -45 -50 -55 -60 -65 510 -5 -8 -11 -14 -17 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -6 -8 -10 -12 -14 -16 IRL, INPUT RETURN LOSS (dB)
Figure 21. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
22 21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 17 480 485 490 495 500 505 f, FREQUENCY (MHz) ALT1 IRL ACPR Gps VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1250 mA N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D 47 44.5 42 39.5 37 -35 -40 -45 -50 -55 -60 510
Figure 22. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg.
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 15
IRL, INPUT RETURN LOSS (dB)
f = 519 MHz
Zo = 2 Zload
f = 519 MHz
f = 469 MHz
Zsource
f = 469 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 469 474 479 484 489 494 499 504 509 514 519 Zsource W 0.454 - j0.742 0.510 - j0.637 0.467 - j0.581 0.495 - j0.513 0.495 - j0.457 0.478 - j0.360 0.505 - j0.295 0.502 - j0.249 0.502 - j0.048 0.499 + j0.002 0.502 + j0.003 Zload W 1.08 - j0.129 1.12 + j0.043 1.07 + j0.160 1.09 + j0.294 1.12 + j0.430 1.16 + j0.573 1.18 + j0.586 1.11 + j0.653 1.07 + j0.810 1.03 + j1.01 1.03 + j1.10
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 23. Series Equivalent Source and Load Impedance -- 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 16 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1011 MTTF FACTOR (HOURS X AMPS2)
1010
109
108 90
100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 24. MTTF Factor versus Junction Temperature
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 17
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW . .. .. .... . .. .... .................. .... ............ ................. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . ............. . ..... ..... ............. .. ..... ... . ...... ..... ......... .. ......... . .. ..... . .. .. ......... ......... .... ...... ....... .... . .. .. ...... . ... ...... .... .... . ..... ... ........ . ... ......... . . .. .... . ...... .... ....... .. . .. ........ -ACPR in 30 kHz +ACPR in 30 kHz ............ ..... ......... . ........... ..... .. . .. .......... .. .... ........... Integrated BW Integrated BW ............ . .. ..... ... ............ .. . ....... .... .....
Figure 25. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 26. Single - Carrier N - CDMA Spectrum
MRF5S4140HR3 MRF5S4140HSR3 18 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF5S4140HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF5S4140HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 19
How to Reach Us:
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MRF5S4140HR3 MRF5S4140HSR3
Rev. 20 2, 5/2006 Document Number: MRF5S4140H
RF Device Data Freescale Semiconductor

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